ptva047002ev all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 04.1, 2015-07-08 thermally-enhanced high power rf ldmos fet 700 w, 50 v, 470 C 806 mhz description the ptva047002ev ldmos fet is designed for use in power amplifer applications in the 470 mhz to 806 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptva047002ev package h-36275-4 features ? input matched ? integrated esd protection ? low thermal resistance ? high gain ? thermally enhanced package ? rohs compliant ? capable of withstanding a 10:1 vswr at 130 w average power under dvb-t signal condition ? human body model class 2 (per ansi/esda/ jedec js-001) rf characteristics dvb-t (8k ofdm, 64qam) characteristics (tested in infneon test fxture, narrowband 806 mhz) v dd = 50 v, i dq = 1200 ma, ? = 806 mhz, input par = 10.5 db (unclipped), output par = 7.8 db @ 0.01% ccdf probability characteristic symbol min typ max unit average output power p out 130 w gain g ps 16.5 17.5 db drain efficiency h d 24 29 % adjacent channel power ratio acpr C29.5 C25 dbc (acpr integrated over 200 khz bw at + 4.3 mhz offset from center frequency) 14 18 22 26 30 34 450 500 550 600 650 700 750 800 850 drain efficiency (%), gain (db) frequency (mhz) dvb - t performance drain efficiency, gain vs frequency v dd = 50 v, i dq = 1.2 a, p out = 135 w avg drain efficiency gain ptva047002ev_g5
data sheet 2 of 8 rev. 04.1, 2015-07-08 ptva047002ev dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 111 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 1200 ma v gs 3.6 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 135 w cw) r qjc 0.215 c/w ordering information type and version order code package description shipping ptva047002ev v1 r0 ptva047002evv1r0xtma1 h-36275-4, bolt-down tape & reel, 50pcs ptva047002ev v1 r250 ptva047002evv1r250xtma1 h-36275-4, bolt-down tape & reel, 250pcs rf characteristics typical dvb-t (8k ofdm, 64qam) performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 600 ma per side, t f = 25c , dvb-t signal, bw = 8mhz, mode = 8k, modulation = 64-qam, guard = 1/4, code rate = 1/2, par= 10.5 db, acpr integrated over 200 khz bw at +4.3 mhz offset from center frequency freq (mhz) gain (db) irl (db) i (a) eff (%) p out avg (w) acpr up acpr low 470 21.45 3.35 10.4 26.5 138 32 33 550 20.6 4.6 9.03 30.6 138 29 29 650 19.6 4.26 9.53 28.7 137 31 31 750 19.2 3.92 9.25 29.3 136 30 31 806 20 6.36 9.07 29.5 134 28 29
data sheet 3 of 8 rev. 04.1, 2015-07-08 ptva047002ev typical performance (cont.) 0 15 30 45 60 -60 -50 -40 -30 -20 30 35 40 45 50 55 efficiency(%) imd up & low (dbc) average output power (dbm) two tone drive - up v dd = 50 v, i dq = 1250 ma, ? = 806 mhz, 1mhz tone spacing efficiency im3 up im3 low ptva047002ev_g2 0 10 20 30 40 50 -70 -60 -50 -40 -30 30 35 40 45 50 55 efficiency(%) imd up & low (dbc) average output power (dbm) two tone drive - up v dd = 50 v, i dq = 1250 ma, ? = 806 mhz, 1mhz tone spacing efficiency im5up im5low ptva047002ev_g3 -10 -5 0 5 10 5 10 15 20 25 350 450 550 650 750 850 950 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss v dd = 50 v, i dq = 1250 ma irl gain ptva047002ev_g4 0 10 20 30 40 50 60 12 14 16 18 20 22 24 200 300 400 500 600 700 800 900 efficiency (%) gain (db) output power (w) pulse cw performance v dd = 50 v, i dq = 1250ma, 100us, 10% dc 470mhz gain 550mhz gain 650mhz gain 750mhz gain 806mhz gain 470mhz eff 550mhz eff 650mhz eff 750mhz eff 806mhz eff ptva047002ev_g1
data sheet 4 of 8 rev. 04.1, 2015-07-08 ptva047002ev reference circuit , 470 C 806 mhz reference circuit assembly diagram (not to scale) r 101 c107 c106 c103 c104 c105 c110 c 109 c108 r 102 c111 c102 c101 c116 c115 c112 c117 c118 c113 c114 r 105 r 104 r 103 c202 c204 c210 c 216 c208 c209 r 204 r 201 r 202 c205 c206 c211 c212 c213 c201 c203 r 207 r206 r208 c217 c 215 c 207 r 209 r 205 rf_in rf_out v dd v g2 v g1 v dd p t v a 0 4 7 0 0 2 e v _ c d _ 0 6 - 0 5 - 2 0 1 5 r 203 c218 c214 ptva047002 ev _out _06_b ptva047002ev_in_07a ro 4350 , .020 (62) ro4350 , .020 (62) v dd v gs v gs each side load pull performance C pulsed cw signal: 16 s, 10% duty cycle, 50 v, 600 ma p 3db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 400 0.35Cj1.06 1.35+j1.51 20.0 57.40 550 50.4 2.57+j5.13 24.1 53.00 200 75.1 500 0.69+j0.71 1.54Cj0.06 19.7 57.30 537 56.8 2.00+j1.63 21.5 55.10 324 73.0 600 0.85Cj0.46 1.10+j1.06 16.5 57.80 603 55.0 1.56+j2.24 19.3 55.80 380 71.0 700 0.97Cj0.88 1.37+j1.18 17.3 57.50 562 53.2 1.38+j2.31 19.3 56.10 407 65.1 860 0.77Cj0.80 1.08+j1.04 16.9 57.50 562 50.6 1.04+j1.82 19.7 55.30 339 64.0 load pull performance
data sheet 5 of 8 rev. 04.1, 2015-07-08 ptva047002ev reference circuit (cont.) reference circuit assembly dut ptva047002ev v1 test fixture part no. ltn/ptva047002ev v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 470 C 806 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description manufacturer p/n input c101, c102 capacitor, 12 pf atc atc800a120jw150xb c103, c104, c105, c106, c107 capacitor, 10 pf atc atc100a100jw150xb c108, c109 capacitor, 100 pf atc atc100a101jw150xb c110, c113, c117 capacitor, 91 pf atc atc100b910jw500xb c111, c112, c115, c116 capacitor, 16 pf atc atc100a160jw150xb c114, c118 capacitor, 10 f tdk corporation c5750x5r1h106k230ka r101, r102 resistor, 10 w panasonic electronic components erj-8geyj100v r103, r104 resistor, 5.6 w panasonic electronic components erj-8geyj5r6v r105 coax, 25 w micro-coax ut-090c-25 output c201 capacitor, 8.2 pf atc atc100a8r2jw150xb c202 capacitor, 6.8 pf atc atc100a6r8jw150xb c203, c205 capacitor, 4.7 pf atc atc100a4r7jw150xb c204 capacitor, 4.1 pf atc atc100a4r1jw150xb c206 capacitor, 2 pf atc atc100a2r0jw150xb c207 capacitor, 8.2 pf atc atc100a8r2jw150xb c208, c210 capacitor, 100 pf atc atc100a101jw150xb c209, c211, c215 capacitor, 91 pf atc atc100b910jw150xb c212, c213, c216, c217 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c214, c218 capacitor, 100 f cornell dubilier electronics (cde) sk101m100st r201, r202, r203, r204, r205, r206, r207,r208 resistor, 1 w panasonic electronic components erj-8geyj1r0v r209 coax, 25 w micro-coax ut-090c-25
data sheet 6 of 8 rev. 04.1, 2015-07-08 ptva047002ev d 2 d1 g1 g2 s h - 36275 - 4 _pd _03 - 28 - 2013 pinout diagram (top view) lead connections for ptva047002ev pin description d1 drain device 1 d2 drain device 2 g1 gate device 1 g2 gate device 2 s source (flange) see next page for package outline information
data sheet 7 of 8 rev. 04.1, 2015-07-08 ptva047002ev package outline specifications package h-36275-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower s 35 . 56 [1. 400 ] 4x 11 . 68 [. 460 ] c l d1 g1 d2 2 x 45 x 1. 19 [45 x . 047 ] 10 . 16 [. 400 ] 9. 144 [. 360 ] c l c 2 x 2 . 03 [. 080 ] ref 13. 72 [. 540 ] 16 . 612 0.500 [. 654 . 020 ] 2x r1. 59 [r . 062 ] 3. 23 0. 51 [. 127 . 020 ] 8x r0. 51 +0. 13 - 0. 51 [ r . 020 +. 005 - . 020 ] g2 l c l 41. 15 [1 . 620 ] 31. 242 0. 280 [1. 230 . 011 ] 1. 63 [. 064 ] 2. 13 [. 084 ] sph [ c l c l c l 4. 58 +0. 25 - 0. 13 . 180 +. 010 - . 005 ] h - 36275 - 4 _po _01 _10 - 22 - 2012 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.127 0.051 mm [0.005 0.002 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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